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 ASDL-6771
High Sensitivity Silicon NPN Phototransistor in Side Look Package
Data Sheet
Description
ASDL-6771 is a silicon phototransistor encapsulated in red Side Look package. It has high sensitivity, low dark current and a wide spectral response. Collector is denoted by a flat on the packaging diagram and the shorter of the two leads. This device matches with infrared emitter ASDL4772 and is ideal for low cost, high volume applications.
Features
* Side Look Package * Wide spectral response * High Sensitivity * High Precision * Low Dark Current * Narrow Viewing Angle * Low Cost * Lead Free & ROHS Compliant
Applications
* Detector in Consumer Electronics * Detector Industrial Electronics & Equipment * Coin counters * Position sensing * IR Data Communication * Photo Interrupter
Ordering Information
Part Number ASDL-677-C ASDL-677-C4 Lead Form Straight Color Clear Packaging Tape & Reel Bulk Shipping Option 4000pcs 0Kpcs / Carton
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010") unless otherwise noted 3. Lead spacing is measured where leads emerge from package 4. Specifications are subject to change without notice.
Absolute Maximum Ratings at TA=25C
Parameter Power Dissipation Collector Emitter Voltage Emitter Collector Voltage Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.06") From Body ] Symbol PDISS VCEO VECo TO TS TJ 60C for 5 seconds -40 -55 Min. Max 00 0 5 85 00 0 Unit mW V V C C C
Electrical Characteristics at 25C
Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Emitter Saturation Voltage Collector Dark Current Thermal Resistance, Junction to Pin Symbol V(BR)CEO V(BR)ECO VCE(SAT) ICEO RqJP Min. 0 5 0. 0. 50 0.4 00 Typ. Max. Unit V V V nA C/W Condition Ic= mA Ee = 0mW/cm Ie = 00A Ee = 0mW/cm Ic = 00A Ee = mW/cm VCE=0V Ee=0mW/cm
Optical Characteristics at 25C
Parameter Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time Symbol / PK tr 400 Min. Typ. 0 900 900 0 00 Max. Unit Deg nm nm s VCC = 5V IC = mA RL = K VCC = 5V IC = mA RL = K VCE = 5V Ee = mW/cm = 940nm Condition
Fall Time
tf
0
s
On State Collector Current
IC(ON)
.
5
mA
Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated)
Collector Power Dissipation Pc(mW)
120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100
Iceo-Collector Dark Current-
A
100 10 1 0.1 0.01 0 0 40 80 120
o
Ta-Ambient Temperature- C
FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
Ta-Ambient Temperature- o C
FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
200 180 160 140 120 100 80 60 40 20 0
Tr Tf-Rise and Fall Time-
Relative Collector Current
Vcc=5V VRL=1V F =100Hz PW =1ms
s
4.0 3.0 2.0 1.0 0
Vce= 5V
0
2
4
6
8
10
0
1
2
3
4
2
5
RL-Load Resistance-K
FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE
Ee-Irradiance-mW/cm
FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
0
o
10
o
20
o
30
o
Relative Sensitivity
1.0 0.9 0.8 0.7
40 50 60
o
o
o
70 o 80 o 90 0.5 0.3 0.1 0.2 0.4 0.6
o
FIGURE 5. SENSITIVITY DIAGRAM
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 007 Avago Technologies Limited. All rights reserved. AV0-005EN - January , 007


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